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| AP1332GEU Pb Free Plating Product Advanced Power Electronics Corp. Simple Gate Drive Small Package Outline 2KV ESD Rating(Per MIL-STD-883D) RoHS Compliant SOT-323 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S 20V 600m 600mA Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 20 6 600 470 2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V mA mA A W W/ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 360 Unit /W Data and specifications subject to change without notice 200606051-1/4 AP1332GEU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max. 600 850 1.2 1 10 10 2 60 Unit V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=600mA VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=6V ID=600mA VDS=16V VGS=4.5V VDS=10V ID=600mA RG=3.3,VGS=5V RD=16.7 VGS=0V VDS=10V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=300mA, VGS=0V Min. - Typ. - Max. 1.2 Unit V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t 10 sec. 2/4 AP1332GEU 2.5 2.5 T A =25 C 2.0 o 5.0V 4.5V 3.5V ID , Drain Current (A) T A = 150 C 2.0 o 5.0V 4.5V 3.5V ID , Drain Current (A) 1.5 1.5 2.5V 1.0 2.5V 1.0 V G =2.0V 0.5 V G =2.0V 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.8 I D = 0.4 A 800 1.6 T A =25 o C Normalized RDS(ON) 1.4 I D =0.6A V G =4.5V RDS(ON) (m) 600 1.2 1.0 400 0.8 200 2 3 4 5 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.0 0.8 1.5 0.6 T j =150 o C 0.4 T j =25 o C Normalized VGS(th) (V) IS(A) 1.0 0.5 0.2 0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP1332GEU f=1.0MHz 12 100 I D =0.6A VGS , Gate to Source Voltage (V) 10 8 V DS =10V V DS =12V V DS =16V C (pF) C iss 6 4 C oss 2 C rss 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 1 3 5 7 9 11 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthja) Duty factor=0.5 100us 1 0.2 0.1 0.05 ID (A) 1ms 0.1 0.1 0.02 0.01 Single Pulse PDM 10ms T A =25 C Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a o 100ms DC 10 100 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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